Samsung’s Heat Path Block (HPB) is a dedicated thermal route intended to move heat away from the die-to-die physical layer (D2D PHY), a heat-generating region in the base die of an HBM stack. Samsung says HPB reduces thermal resistance and supports stable operation as memory speed and density rise. The company has begun shipping HBM4E samples to major customers, but its public account describes HPB as under validation; customer qualification and independent HPB test results have not been disclosed.
Why HBM4E needs thermal management
High-bandwidth memory (HBM) stacks multiple memory dies and connects them closely to a processor such as a GPU. More data moving through a dense package raises system-level demands on power, heat removal, bandwidth, and latency. Samsung’s August 2026 account of FMS describes these as interconnected AI-system design constraints, rather than issues that can be solved by memory chips alone: Samsung’s FMS 2026 account.
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Samsung identifies the D2D PHY—the interface carrying data between the HBM base die and GPU—as one of the major heat-generating regions in the base die. As throughput rises, removing heat from that area matters for maintaining operation in a high-bandwidth, high-density system.
What Samsung’s Heat Path Block is designed to do
Samsung describes HPB as a dedicated path for transferring and dissipating heat from the D2D PHY region. In principle, a defined route for heat to leave a hotspot can reduce the thermal resistance between that region and the package’s heat-dissipation structures. Samsung says HPB lowers thermal resistance and improves operational stability; the public description does not provide independent measurements, test conditions, or customer qualification results. See Samsung’s COMPUTEX 2026 account.
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The reported goal is targeted: HPB addresses heat associated with the base-die interface. It is not described as a standalone cooler for an entire AI accelerator, nor does Samsung’s public explanation quantify how much HPB alone changes system temperature or performance.
HPB and hybrid copper bonding are different approaches
Samsung has also presented hybrid copper bonding (HCB), but it addresses the stacked dies’ bonding structure rather than the dedicated heat path HPB is intended to provide. Treating their thermal claims as interchangeable would confuse both the mechanism and the comparison baseline.
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| Approach | What it addresses | Samsung’s stated thermal claim | Publicly stated status or context |
|---|---|---|---|
| Heat Path Block (HPB) | A heat-transfer route from the D2D PHY hotspot in the HBM base die. | Samsung says it reduces thermal resistance; no numerical HPB-only result or test conditions are stated in the public account. | Samsung said HPB was being validated on HBM4E and planned for future HBM5 products. |
| Hybrid copper bonding (HCB) | A method for bonding stacked dies, rather than HPB’s dedicated D2D PHY heat path. | Samsung said HCB would reduce heat resistance by more than 20% relative to thermal compression bonding (TCB). | Samsung presented HCB in the context of next-generation HBM with 16 or more layers. |
The HCB comparison comes from Samsung’s GTC 2026 announcement. Its “more than 20%” figure uses TCB as the baseline and is not a measurement of HPB. The available claims therefore do not support a direct performance comparison between HPB and HCB.
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On May 29, 2026, Samsung announced it had begun shipping 12-layer HBM4E samples to major global customers. The company said that configuration has 48 GB capacity, stable pin speed of 14 Gbps scalable to 16 Gbps, and bandwidth of up to 3.6 TB/s per stack. Samsung characterized the product as an industry first; these specifications and that characterization are Samsung’s claims. It said mass production would follow customer schedules after sampling and optimization, so sample shipments should not be read as general availability or completed customer qualification. Details are in Samsung’s HBM4E sample announcement.
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Samsung also reported 16% better energy efficiency and more than 14% improvement in thermal resistance characteristics versus the previous generation. These are company-reported HBM4E comparisons, not published independent measurements of HPB’s contribution. They should not be combined with Samsung’s separate HCB-versus-TCB figure.
There is a difference in public descriptions of HPB’s implementation status. Samsung’s COMPUTEX account said HPB was being validated on HBM4E and planned for adoption in future HBM5 products. In a June 3, 2026 report, Tom’s Hardware reported that Samsung representatives said HPB had already been implemented and verified on HBM4E. The company’s own published wording is the more cautious account; the trade-publication report adds a more advanced status but does not establish publicly available test data or customer qualification.
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What buyers and system designers should take from the announcement
- HPB is a package-level thermal feature. Its stated target is heat from the D2D PHY region in the HBM base die, not general-purpose cooling hardware.
- HBM4E samples are not the same as a qualified production supply. Samsung said customer sampling and optimization precede mass production, which will follow customer schedules.
- The thermal figures have different baselines. Samsung’s HBM4E generation-over-generation claims and HCB’s comparison with TCB describe separate measures and should not be added together or attributed to HPB alone.
- Public HPB evidence remains limited. Samsung describes its intended thermal path and validation status, while the reported verification does not come with disclosed independent tests, conditions, or qualification results.
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