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Why Can’t Chipmakers Replace ASML’s EUV Machines With Older DUV Lithography?

DUV can reach small feature patterns through multi-patterning, but added exposures and processing make it an impractical universal substitute for EUV. Chipmakers use both technologies on different layers.
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Chipmakers can use older deep ultraviolet (DUV) lithography to make very small patterns, but doing so often means dividing a pattern across multiple exposures and extra processing. Extreme ultraviolet (EUV) can print some of the most intricate layers with fewer patterning steps. That makes DUV a poor universal replacement for EUV on the hardest layers—not a technology that has become obsolete. Leading-edge chips use both.

What makes EUV different from DUV?

Lithography projects patterns onto a silicon wafer. The light’s wavelength is one factor that affects how finely an optical system can resolve those patterns. ASML lists a wavelength of 13.5 nm for EUV, compared with 193 nm for its highest-resolution DUV systems. The much shorter EUV wavelength supports finer pattern imaging.

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The scanners also use different optical designs: EUV systems use reflective mirrors, while DUV systems use lenses. They are distinct lithography systems, not simply the same machine with a different light source. ASML describes EUV as providing the highest resolution in high-volume manufacturing and DUV as a cornerstone of the semiconductor industry (ASML products and services).

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Can DUV still print very small features?

Yes. DUV can extend patterning through multiple exposures, often called multi-patterning. Rather than printing a dense pattern in one exposure, the process divides it into parts and combines them through successive exposures and intervening processing.

This can produce the required geometry, but it adds steps and process-integration complexity. EUV’s shorter wavelength allows some intricate layers to be patterned with fewer exposures and related processing. ASML’s 2025 annual-report strategy material cites a model estimating around 20% fewer process steps per wafer for EUV single patterning than for DUV multi-patterning. That is a modeled process-step comparison—not a guaranteed fab-wide reduction in cost, energy use, or defects, and not a universal yield advantage.

Why not use multiple DUV exposures for every layer?

The practical question is not whether DUV can make a small feature at all. It is whether repeating exposures, masks, and processing is a workable way to produce a particular layer at the required manufacturing scale. Each extra patterning stage makes the process more involved. EUV can simplify patterning on layers where its resolution avoids some of that multi-patterning.

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There is no universal break-even cost, yield, or energy figure established by the cited comparison. Those outcomes depend on the particular design and manufacturing process; the 20% estimate concerns modeled process steps, not a blanket measure of overall fab economics.

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Why do chipmakers use EUV and DUV on the same chip?

A chip contains many layers with different patterning requirements. EUV is used for the most intricate layers, while DUV prints many others. ASML describes DUV immersion systems working in combination with EUV on different layers of a chip and says DUV systems can also be used on their own (ASML 2025 annual-report strategic report). The technologies therefore have complementary roles rather than an all-or-nothing relationship.

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What changes with High-NA EUV?

High-NA EUV raises the numerical aperture from 0.33 to 0.55, extending EUV patterning capability. In June 2024, ASML and imec announced a joint lab intended to let manufacturers develop process integration, masks, metrology, and other parts of the ecosystem before installing production tools (ASML and imec’s lab announcement). Imec also described the ecosystem’s readiness work in February 2024 (imec’s announcement).

ASML’s 2025 annual-report filing says the first TWINSCAN EXE:5200B shipped in early April 2025 ready for high-volume manufacturing use (ASML 2025 Annual Report). A tool being ready for such use and a shipment do not establish broad customer deployment or mature yields across the industry.

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The practical answer

DUV remains valuable and can be extended with multi-patterning, but using it as a direct substitute for EUV on the most demanding layers can require additional exposures and processing. EUV offers a shorter wavelength and can reduce patterning steps for those layers. Because less demanding layers still suit DUV, chipmakers combine the two instead of replacing one technology with the other.

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