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Infineon Technologies AG and Wolfspeed announced on 15 October 2026 a multi-year agreement that adds Wolfspeed’s 200 mm silicon-carbide (SiC) wafers to their existing 150 mm supply relationship, supporting Infineon’s move to larger-wafer production.
What the companies agreed
The agreement covers Wolfspeed’s supply of 200 mm SiC substrates to Infineon and extends a relationship the companies describe as more than 20 years old. It does not replace the existing 150 mm arrangement: the announcement says 200 mm wafers will be added to the current 150 mm supply while Infineon transitions part of its manufacturing base to the larger format.
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Neither company disclosed the contract’s value, wafer volumes, pricing, delivery schedule or exact end date. “Multi-year” is the only duration description provided. Any estimate of the deal’s financial size or annual capacity would therefore be analysis, not an announced term.
Alexander Gorski, Infineon’s chief operations officer, said that securing “a high-quality, resilient supply of 200-millimeter substrates” is essential to meeting customers’ long-term commitments. Wolfspeed CEO Robert Feurle described the expanded agreement as the result of the companies’ established relationship.
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- Silicon carbide (SiC) 4H conductive wafers/square sheets, thickness 0.35 mm, for research and development experiments in power electronics and optoelectronics.
- Silicon carbide has a wider bandgap, enabling it to withstand higher operating temperatures, the bandgap of silicon carbide is approximately three times that of silicon, with a theoretical operating temperature exceeding 400°C.
- The critical breakdown field strength of silicon carbide is approximately ten times that of silicon, enabling it to withstand higher voltages and making it more suitable for high-voltage devices.
- The high thermal conductivity of silicon carbide effectively conducts heat, reduces device temperature, and maintains normal operation, its saturated electron drift velocity is twice that of silicon, which helps increase operating frequency and enables device miniaturization.
Why 200 mm silicon-carbide wafers matter
More die area from each wafer
A wafer’s diameter affects how many power-device dies can be laid out before processing and edge losses. Moving from 150 mm to 200 mm increases the circular wafer’s theoretical surface area by about 78 percent (the square of the 200-to-150 diameter ratio). The usable gain in a real factory is lower and depends on die size, edge exclusion, defects, yield and the device design.
Infineon says larger wafers can provide more usable die area, reduce substrate cost per unit and improve manufacturing efficiency. Those are manufacturing potential benefits, not a guarantee that every product or production run will achieve the same cost reduction.
Rank #2
- Silicon carbide (SiC) 4H conductive wafers/square sheets, thickness 0.35 mm, for research and development experiments in power electronics and optoelectronics.
- Silicon carbide has a wider bandgap, enabling it to withstand higher operating temperatures, the bandgap of silicon carbide is approximately three times that of silicon, with a theoretical operating temperature exceeding 400°C.
- The critical breakdown field strength of silicon carbide is approximately ten times that of silicon, enabling it to withstand higher voltages and making it more suitable for high-voltage devices.
- The high thermal conductivity of silicon carbide effectively conducts heat, reduces device temperature, and maintains normal operation, its saturated electron drift velocity is twice that of silicon, which helps increase operating frequency and enables device miniaturization.
Why SiC is used in power electronics
Silicon carbide can support high-voltage, high-temperature and high-frequency power conversion with lower switching and conduction losses than conventional silicon in many designs. That makes SiC attractive where efficiency, cooling requirements and compact power systems matter. The substrate is the crystalline base on which SiC device layers are formed; an epitaxial layer, or “epi,” is added before many power devices are fabricated.
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How the agreement fits Infineon’s manufacturing plan
Infineon operates a 200 mm SiC factory in Kulim, Malaysia. The company says the Wolfspeed arrangement supports its conversion to 200 mm manufacturing while broadening substrate sourcing. In practical terms, the deal gives Infineon an additional qualified 200 mm source as it scales production, while retaining access to 150 mm material during the transition.
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- Wafer Pattern May Vary from the Product Images. Great to be used as gift, display object, exhibition, educating demonstration, testing, decoration or your collection
- Beautiful microchip pattern structure made by the advanced copper technology
- 90~130nm minimum microchip feature Copper Characterization with TEOS or Black Diamond Low-k ILD on the single crystal silicon wafer
- The original value of un-polished wafer is above $500
- No guarantee for research and other applications
That combination can help a manufacturer manage a mixed-generation production environment: existing products and tools may continue using 150 mm wafers while newer lines and qualified devices move to 200 mm. The announcement does not identify which Infineon products will use the new wafers or state how quickly the Kulim operation will convert.
Wolfspeed’s 200 mm capability
Wolfspeed commercially launched 200 mm SiC bare wafers and epitaxy in September 2025. The company described those materials as having a 350 micrometre bare-wafer thickness and improved doping and thickness uniformity. Those specifications relate to Wolfspeed’s commercial 200 mm materials; the agreement announcement does not state the exact wafer specifications, qualification status or volumes Infineon will receive.
Rank #4
- 4H Silicon Carbide (SiC) wafers devised for advanced research and development in power electronics and optoelectronics.
- With a thickness of 0.35mm, these conductive square sheets can withstand operating temperatures exceeding 400°C, making them ideal for high-temperature applications.
- Exceptional breakdown field strength, approximately ten times that of silicon, allows for reliable operation in high-voltage devices.
- Superior thermal conductivity effectively dissipates heat, reducing device temperature and ensuring stable performance during operation.
- Enhanced electron drift velocity, twice that of silicon, facilitates increased operating frequencies and supports the miniaturization of electronic devices.
For Wolfspeed, the Infineon contract extends a long-running customer relationship into its larger-wafer product line. It may provide a demand anchor as the company ramps 200 mm output, but the releases do not disclose a capacity reservation, minimum purchase commitment or revenue forecast for this specific agreement.
Where silicon-carbide power semiconductors are used
The companies identify several demand areas for SiC:
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- Wafer Pattern May Vary from the Product Images. Great to be used as gift, display object, exhibition, educating demonstration, testing, decoration or your collection
- Beautiful microchip pattern structure made by the advanced copper technology
- 90~130nm minimum microchip feature Copper Characterization with TEOS or Black Diamond Low-k ILD on the single crystal silicon wafer
- The original value of un-polished wafer is above $500
- No guarantee for research and other applications
- Electric-vehicle drivetrains: inverters and other high-voltage conversion stages can use SiC to improve range or reduce cooling-system requirements.
- Renewable-energy equipment and solar inverters: efficient switching helps convert and manage electricity from photovoltaic and other generation systems.
- Industrial motor drives: factory motors and pumps benefit from efficient variable-speed power conversion.
- Energy storage: battery-storage systems require bidirectional conversion between batteries and the grid.
- AI-datacenter power infrastructure: high-density computing increases the importance of efficient power supplies, converters and distribution equipment.
These are end markets named in the announcements, not a disclosure of Infineon’s customer allocation or Wolfspeed’s shipment mix.
Independent reader supportYour contribution helps us test, update, and keep practical guides available for everyone.How large is the SiC market?
Wolfspeed cited Yole’s Power SiC 2026 – Markets and Applications estimate of a market growing from $3.4 billion in 2024 to $11.1 billion by 2031. Those figures are a market forecast cited by Wolfspeed in 2026, not revenue guidance for either company and not a measurement of this agreement.
The projected expansion reflects demand from electrification, renewable generation, storage and data-center infrastructure. Actual growth will depend on vehicle production, energy-project investment, device qualification cycles, manufacturing yields, competing power technologies and the availability of substrates and epitaxial material.
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| Company | Immediate effect of the agreement | Potential strategic value | What is not established |
|---|---|---|---|
| Infineon | Adds 200 mm Wolfspeed wafers while maintaining 150 mm supply. | Supports the 200 mm conversion at its Kulim, Malaysia, SiC fab and broadens substrate sourcing. | Product allocation, qualification timetable, wafer volumes and cost savings. |
| Wolfspeed | Extends a more-than-20-year customer relationship to its 200 mm materials. | Provides a potential customer base for scaling commercial 200 mm wafers and epitaxy. | Contract revenue, capacity commitment, pricing, minimum volumes and delivery milestones. |
Relevant background: the earlier 150 mm deal
In January 2024, Infineon and Wolfspeed expanded and extended a 150 mm SiC wafer agreement originally signed in February 2018. That revision included a multi-year capacity reservation and was presented as a way to support supply stability amid demand from automotive, solar, electric-vehicle and energy-storage applications. The October 2026 announcement builds on that relationship by introducing 200 mm substrates rather than disclosing a wholly new supplier relationship.
What to watch after the announcement
- Qualification: Infineon must qualify the 200 mm substrates and associated epitaxy for its devices before commercial output can rely on them.
- Ramp execution: Wolfspeed’s ability to increase consistent 200 mm production will determine how much of Infineon’s planned supply can actually move to the new format.
- Yield and uniformity: Larger wafers only lower unit costs if defect rates, doping uniformity, thickness control and manufacturing yields meet production requirements.
- Supply resilience: The strategic benefit depends on dependable deliveries and on how Infineon balances Wolfspeed material with other qualified sources.
- Demand: Automotive, renewable-energy, storage and AI-datacenter orders will influence how quickly 200 mm capacity is absorbed.
The companies’ releases include standard forward-looking risk language covering production ramps, customer acceptance, demand, costs and supply-chain execution. The agreement establishes a supply framework, but it does not by itself prove that a particular capacity, cost or market-share outcome has been achieved.
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