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Samsung reportedly offered major customers HBM4 at a mid-to-high $4-per-gigabit price in negotiations for 2027 annual supply—more than three times the roughly $1.50-per-gigabit HBM3E price used for comparison. The figures come from unnamed semiconductor-industry sources cited by Maeil Business Newspaper; they describe an offer under negotiation, not a confirmed contract price or evidence that customers accepted it.
What the reported 3× quote means
Maeil Business Newspaper reported on 2 October 2026 that Samsung was negotiating 2027 HBM4 annual-supply deals with major customers and had offered a price in the mid-to-high $4 range per gigabit. The paper compared that with a then-current HBM3E price of about $1.50 per gigabit and characterized the HBM4 offer as more than three times higher. Both figures are attributed to unnamed industry sources, not to a public Samsung price list or a named customer. Maeil Business Newspaper’s report said negotiations were underway and expected to conclude during October.
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That distinction matters: a reported offer is not a signed price. The public account does not disclose the negotiating customers, whether they accepted the offer, or the final terms. It also does not establish that Samsung is “squeezing” customers; that wording goes beyond what the reported figures show.
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HBM4 is a different product generation, not a retail DRAM price
The comparison concerns high-bandwidth memory supplied through annual contracts, quoted per gigabit. It is not a consumer-facing price for a memory module, nor proof that all DRAM prices have risen by the same multiple. The available account does not connect Samsung’s specific HBM4 offer causally to broader global DRAM pricing.
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There is product context for a premium, but it does not verify the reported quote. In an August 2025 outlook, TrendForce expected HBM4 to command a premium over HBM3E because of higher technical barriers and costs, while also forecasting downward pressure on HBM3E contract prices in 2026. That forecast predates the reported 2027 negotiations and should be treated as market context, not confirmation of Samsung’s offer. TrendForce’s 15 August 2025 bulletin provides that earlier outlook.
What Samsung says HBM4 delivers
Samsung announced on 12 February 2026 that it had begun mass production and commercial shipments of HBM4. Its published specifications and comparisons with HBM3E are company claims; the sources cited here do not provide independent laboratory measurements or customer deployment benchmarks.
| Measure | Samsung-published HBM4 information |
|---|---|
| Transfer speed | 11.7 Gbps consistent transfer speed; up to 13 Gbps |
| Bandwidth | Up to 3.3 TB/s per stack |
| Capacity | 24–36 GB in 12-layer configurations; up to 48 GB with planned 16-layer stacking |
| Power and thermal performance | Approximately 40% better power efficiency, 10% better thermal resistance and 30% better heat dissipation than HBM3E, according to Samsung |
Samsung says it used 1c DRAM and a 4nm logic process for HBM4. In the company’s announcement, Samsung EVP and Head of Memory Development Sang Joon Hwang said the company “took the leap” by adopting those advanced processes rather than relying on existing proven designs. The complete announcement and its qualifications are available in Samsung Semiconductor’s HBM4 release.
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What remains unknown
- The final negotiated HBM4 contract price.
- Which customers were involved in the reported negotiations and whether they accepted the offer.
- Whether broader DRAM-market pricing movements caused or influenced the specific offer.
- Independent test results confirming Samsung’s published HBM4 performance figures.
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