Do these 3 things before closing this tab:
1Fix the driver behind crashes, sound loss and screen glitches2Repair Windows errors before they cause bigger problems3Scan for outdated or missing drivers - takes under a minuteThe right supplier is the one that can prove its exact device, package, process and manufacturing route will meet your converter’s mission profile throughout the ramp—not simply the one with the highest voltage rating or a familiar automotive badge. Evaluate silicon-carbide (SiC) and gallium-nitride (GaN) candidates against the actual electrical, thermal and fault conditions, then verify qualification scope, application-relevant reliability, process control, traceability, capacity, change control and continuity commitments. Vendor shipment statistics and “automotive qualified” labels are useful starting points, but they are not proof of program readiness.
Start with the converter, not the supplier
A production decision should begin with a frozen use case. Write down the converter topology, bus-voltage range, peak and continuous current, switching frequency, duty-cycle distribution, expected lifetime, cooling method, ambient-temperature range, isolation requirements, fault energy and protection response. Include startup, shutdown, short-circuit, avalanche or unclamped-inductive events, hard commutation, gate-drive excursions and abnormal humidity or contamination where they are credible in service.
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Also define the manufacturing environment: board or module assembly process, solder or sintering method, cleaning chemistry, conformal coating, vibration, thermal cycling and end-of-line screening. A part that survives a supplier’s laboratory test may still be unsuitable if its package, gate loop or thermal path is incompatible with your assembly.
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For every candidate, record the exact ordering code, die or process generation, package, datasheet revision, wafer fabrication site, assembly and test sites, approved alternates and any firmware or controller dependency. State whether the offer is a bare die, a discrete transistor, an integrated power IC or a power module. Require a written statement identifying which qualification reports apply to that exact configuration.
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- Capture electrical and thermal limits at the intended operating point, not only headline absolute maximum ratings.
- Record the package construction, substrate, lead finish, internal interconnect, isolation rating and specified junction-to-case or junction-to-board thermal path.
- Map each proposed alternate to the same die, package and qualification scope; an apparently compatible ordering code can carry different process or assembly evidence.
- Define the production ramp by month, site and line, including engineering builds, pilot lots, launch volumes and steady-state demand.
Match qualification evidence to the product type
Qualification names are meaningful only when their scope matches the product. AEC-Q100 is intended for packaged integrated circuits, AEC-Q101 for discrete semiconductors, and AQG 324 for power modules. A general “automotive qualified” statement does not establish which standard, revision, part number, package, process or test limits were used.
| Evidence label | What it generally covers | Questions to ask |
|---|---|---|
| AEC-Q100 | Packaged integrated circuits, including power-management or driver ICs | Which IC family and ordering codes? Which revision, grades, lots, sample sizes, stress conditions and failure criteria? |
| AEC-Q101 | Discrete semiconductor devices such as MOSFETs and diodes | Does the report cover the exact die, package, assembly site and process generation? Were production-intent lots used? |
| AQG 324 | Power-module qualification, with a SiC annex in Release 04.1/2025 | Which release and annex apply? Are module construction, thermal interfaces and customer-specific limits covered? |
Module qualification is not interchangeable with device qualification. A module combines semiconductor dies, substrates, interconnects, molding or sealing, terminals and a thermal interface. Its failures can arise from die wear-out, bond fatigue, substrate cracking, delamination, corrosion or interface degradation even when the individual transistor has passed a discrete-device program.
Understand AQG 324’s customer-specific element
AQG 324 Release 04.1/2025 includes a SiC annex and describes power cycling, storage, reverse bias, gate bias, humidity, dynamic gate stress, dynamic reverse bias and dynamic H3TRB testing. The document states: “Test parameters currently are empirical values and will be given just as an orientation. They have to be agreed between customer and supplier.” That sentence appears in an ECPE guideline copy hosted by StudyLib; confirm the current official ECPE release before incorporating limits into a contract.
Ask the supplier to provide the agreed test matrix in writing. It should identify junction-temperature swing, current, voltage, switching waveform, humidity, gate conditions, sample count, number of lots, read points, drift limits and failure criteria. If your mission profile differs materially, negotiate an additional test rather than treating a nominal pass as universal evidence.
Request reliability data that reflects the application
Static qualification remains necessary, but high-frequency converters can fail through mechanisms that static bias tests do not reproduce. Review both conventional stress testing and dynamic methods, and tie every result to your waveform and thermal profile.
Dynamic gate stress
Dynamic gate-stress testing repeatedly applies switching-relevant gate waveforms. Request the positive and negative gate levels, rise and fall times, overshoot, frequency, duty cycle, temperature, gate resistance and monitoring method. Determine whether the supplier measured threshold drift, leakage, transconductance, on-resistance or switching delay before and after stress, and what limits constituted failure.
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Dynamic H3TRB
High-humidity, high-temperature reverse-bias testing with dynamic switching can expose interactions among electric field, moisture, surface passivation and repetitive transients. Ask whether the test used the intended isolation voltage and switching waveform, how humidity was controlled, and whether failures were electrical, parametric or physical. Confirm that samples came from multiple production lots rather than a single engineering batch.
Dynamic reverse bias
Dynamic reverse-bias tests apply changing voltage conditions closer to converter operation than a constant reverse-bias soak. Request the voltage slew rate, repetition rate, clamping arrangement, temperature, duration and post-test inspection. NI describes dynamic gate stress, dynamic H3TRB and dynamic reverse bias as more application-like than static-only approaches, while noting that scaling such tests to larger batches remains difficult. That limitation makes methodology and sample definition especially important.
Read the report behind the summary
For every reliability claim, request:
- Part number, package, die revision and production or engineering status.
- Number of devices, modules, lots and manufacturing dates.
- Test fixtures, waveforms, thermal control, humidity and electrical limits.
- Parametric drift data, not only a pass/fail count.
- Failure-analysis reports, corrective actions and retest results.
- Confidence bounds or statistical treatment, with the population and exposure time clearly stated.
Do not compare a vendor’s accelerated test hours with another vendor’s field units as if they were the same measure. Ask how the acceleration model was established and which failure mechanisms it can or cannot represent.
Separate public field statistics from verified reliability
Navitas’s April 15, 2025 announcement reported more than 250 million GaN units shipped over seven years, more than 2 trillion field-device hours, and a cumulative field-failure rate approaching 100 parts per billion. The figures are company-reported and attributed to a reliability report that the company said was available to qualified customers. Gene Sheridan, Navitas CEO and co-founder, described the result as leadership in GaN for EV power systems; that is a company statement, not an independently audited cross-market result.
Before using such a number in a supplier comparison, request the underlying population, exposure-hour calculation, failure definition, confidence interval, return-screening rules, geographic and application mix, censoring treatment and device-generation breakdown. A field-failure figure without those qualifiers cannot establish that two suppliers have equivalent risk.
Audit process control, traceability and change management
Reliability evidence is only as durable as the process that produced it. Obtain the quality-system scope and a complete list of wafer, substrate, assembly and test sites. For a vertically integrated supplier, verify which operations are genuinely internal and which rely on external sources.
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Process controls to examine
- Incoming controls for SiC or GaN substrates, epitaxial wafers, metals, mold compounds, die attach and ceramics.
- Statistical process-control plans for critical dimensions, defect density, gate leakage, breakdown voltage, on-resistance and thermal resistance.
- Control of contamination, particles, voiding, bond placement, sinter quality and passivation.
- Wafer sort, final test, burn-in or screening limits, test-equipment calibration and guard-banding.
- Yield dashboards by site, product family, lot and failure mode, with trends rather than a single snapshot.
Traceability and product change
Require traceability from finished unit to wafer lot, assembly lot, test program, date code, materials and operators or equipment where appropriate. Review the product-change-notification (PCN) procedure: notification lead time, customer approval rights, last-time-buy rules, requalification triggers and treatment of emergency deviations. Ask for examples of recent process changes and the evidence used to show equivalence.
Define failure-analysis turnaround, containment authority, corrective-action format and escalation contacts. A supplier that cannot rapidly isolate a suspect lot can turn a small parametric drift into a line stoppage.
Prove capacity against your ramp, not a headline number
Production readiness is a program-specific calculation. Ask for capacity by bottleneck step—substrate, epitaxy, wafer fabrication, wafer sort, die attach, molding, assembly, final test and burn-in—and distinguish nameplate capacity from demonstrated good output and output available to your program.
| Capacity evidence | What it should show | Why it matters |
|---|---|---|
| Historical output | Monthly good units, yield and rework for the exact family or a demonstrably similar process | Reveals whether capacity is proven rather than planned |
| Utilization and bottleneck | Current utilization, constrained tool groups, maintenance losses and cycle time | Shows how much headroom remains during your ramp |
| Expansion plan | Equipment, qualification milestones, staffing and site readiness dates | Separates funded, installed and qualified capacity |
| Allocation commitment | Reserved volume, lead-time assumptions, priorities and shortage rules | Connects factory output to the quantity you can actually receive |
| Continuity | Qualified secondary sites, material sources, recovery time and inventory policy | Reduces single-point-of-failure exposure |
ST’s 2024 technology presentation describes vertical manufacturing and expansion plans. Infineon’s product information describes secured high-volume supply for a module family. Those are supplier-published claims, not independent confirmation of allocation for your project. Reconcile every claim with current site, line, yield, bottleneck, lead-time and allocation evidence.
Use a ramp stress test
- Give the supplier your monthly demand curve, mix, qualification builds, safety stock and maximum upside scenario.
- Ask for a month-by-month supply plan showing good units, expected yield, scrap, rework, test capacity and inventory.
- Identify what happens if yield is five or ten percentage points below plan, a critical tool is down, or a second site is not yet qualified.
- Obtain contractual language for reserved capacity, allocation during shortages, notice of constraints and recovery milestones.
Compare SiC and GaN at system level
There is no universal winner between SiC and GaN. Select the technology that meets the converter’s voltage, power, frequency, thermal and protection requirements with acceptable lifetime risk and total system cost.
| Comparison axis | Questions for both technologies |
|---|---|
| Voltage and power | What are the continuous, peak, transient and repetitive voltage/current demands, and what derating is required? |
| Switching frequency and losses | How do conduction, switching, reverse-recovery or output-capacitance losses behave at the actual frequency and load profile? |
| Thermal path | What junction temperature, thermal impedance, cooling hardware and interface materials apply in the assembled product? |
| Topology and protection | Does the device tolerate the topology’s commutation, short-circuit response, dead time, gate-drive limits and fault energy? |
| Package and parasitics | Are inductance, isolation, creepage, gate-loop layout and mechanical mounting compatible with the design? |
| Qualification | Is evidence device-level, IC-level or module-level, and does it cover the exact ordering code and process? |
| System cost | Include driver, magnetics, heatsink, filtering, protection, PCB, assembly, screening and expected service exposure—not only semiconductor price. |
| Support and continuity | Can the supplier provide reference designs, field application help, failure analysis, PCN discipline and capacity commitments? |
Normalize the comparison before scoring. A 650 V GaN transistor and a 1,200 V SiC module serve different voltage classes; even within one class, different cooling, switching frequency, topology and protection can reverse the system-level result.
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Use a weighted supplier scorecard
Keep three evidence columns separate: supplier claim, customer- or audit-verified evidence, and independent test or analysis. Score only the evidence that applies to the exact product and production route.
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| Category | Suggested review points | Gate question |
|---|---|---|
| Product fit | Electrical envelope, package, thermal path, protection and approved alternates | Does the part meet the mission profile with documented margin? |
| Qualification | Correct standard, revision, part number, lots, sample size and deviations | Is the evidence for this exact configuration? |
| Reliability | Dynamic tests, lifetime, failure analysis and statistical treatment | Are tested stresses relevant to real waveforms and environment? |
| Process maturity | SPC, defect controls, yield trend, traceability and audit results | Can the process detect and contain drift? |
| Capacity | Demonstrated output, bottlenecks, ramp plan and allocation | Can good units arrive when the factory needs them? |
| Change and continuity | PCN, secondary sites, materials, recovery and inventory | What happens when a process, site or supplier changes? |
| Support | Applications engineering, models, samples, FA and response times | Will issues be resolved at production speed? |
| Economics | Total system cost, qualification cost, test cost and contractual terms | Does the business case survive realistic yield and service assumptions? |
Set non-negotiable gates before applying weighted scores. For example, a candidate that lacks exact-product qualification, cannot provide traceability, or has no credible capacity reservation should not win through a low component price.
Independent reader supportYour contribution helps us test, update, and keep practical guides available for everyone.Illustrative products: what to verify
Infineon CIPOS Prime 1200 V automotive CoolSiC module
Infineon describes a 1,200 V automotive-grade CoolSiC MOSFET molded power module and states that the family has AEC-Q101 and AQG 324 qualification with secured high-volume supply. Verify the exact variant, latest qualification report, module construction, current allocation, assembly site and customer-specific thermal and power-cycling limits.
Navitas GaNSafe IC family
In April 2025, Navitas announced AEC-Q100 and AEC-Q101 qualification for its high-power GaNSafe IC family. The supporting reliability report was described as available to qualified customers. Request that report, identify which ordering codes and generations it covers, and confirm whether the IC’s integrated protection functions match your gate-drive, fault and diagnostic requirements.
Transphorm TP65H035G4WSQA
A Renesas announcement describes this GaN FET as AEC-Q101 qualified and lists typical on-resistance of 35 mΩ in a TO-247 package. The announcement’s availability statement was prospective at publication, so confirm current production status, lead time, allocation, qualification documentation and package-specific switching data directly with the supplier.
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Common traps and how to correct them
Trap: treating a badge as a guarantee
Correction: map the badge to standard revision, product identity, package, process, sites, lots and test scope. Obtain the report or a controlled qualification summary.
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Trap: accepting static tests for a dynamic failure problem
Correction: add dynamic gate, reverse-bias or humidity testing that reproduces your switching waveform, thermal swing and gate conditions. Define drift and failure limits before testing.
Trap: confusing nameplate capacity with available supply
Correction: ask for demonstrated good output, bottleneck utilization, yield trend, reserved allocation and shortage rules for your ramp.
Trap: comparing unmatched SiC and GaN demonstrations
Correction: normalize voltage, topology, frequency, cooling, protection, package parasitics and qualification level. Model total system cost and lifetime exposure.
Trap: relying on one field statistic
Correction: obtain population, exposure hours, failure definition, confidence bounds and generation mix. Keep company-reported data separate from audited or independently measured evidence.
A practical production-qualification workflow
- Freeze the mission profile. Document electrical, thermal, environmental, fault and lifetime conditions, plus the production ramp.
- Shortlist by product fit. Eliminate devices whose voltage, current, package, protection or thermal path cannot meet the design with margin.
- Request controlled evidence. Collect datasheets, qualification summaries, underlying reports, sample definitions, deviations and failure analyses.
- Audit the route. Review wafer, substrate, assembly and test sites; SPC; traceability; incoming controls; PCN and corrective-action procedures.
- Run application-relevant tests. Reproduce switching, gate, humidity, thermal and fault stresses, using statistically meaningful lots.
- Validate the ramp. Reconcile capacity, yield, bottlenecks, expansion milestones and allocation with your demand curve.
- Contract the commitments. Define PCN notice, requalification, reserved capacity, continuity, failure response and data access.
- Monitor after nomination. Track lot quality, parametric drift, yield, delivery, field returns and change notices throughout production.
Questions to put in the supplier review
- Which exact ordering codes, die revisions, packages and sites are covered by each qualification report?
- Which tests used production-intent lots, and how many lots and units were included?
- What dynamic gate, reverse-bias, humidity and power-cycling data exist for our waveform and thermal mission?
- What are the acceptance limits, drift limits, confidence bounds and failure-analysis conclusions?
- Where are substrate, wafer, assembly and final-test steps performed, and which are single-source?
- What were monthly good-unit output, yield and bottleneck utilization for the last comparable production period?
- How much capacity is reserved for our program, and what happens during an industry shortage?
- What changes trigger a PCN, customer approval, requalification or last-time buy?
- What is the standard failure-analysis turnaround and escalation path for a suspect lot?
- Which application-engineering resources, models, samples and design reviews are included?
Decision rule
Nominate a SiC or GaN supplier only when the exact product passes three independent tests: it fits the converter’s electrical and thermal mission with margin; its qualification and reliability evidence covers the actual device, package and application stresses; and its manufacturing route can deliver your ramp with traceability, controlled change and credible continuity. If any one of those is unproven, treat the supplier as a development candidate—not a production source—and close the evidence gap before committing tooling, inventory or customer launch dates.
Quick Recap
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