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Compare an extreme-ultraviolet (EUV) scanner as a coupled imaging-and-productivity system, not as a single headline number. Numerical aperture (NA) indicates how finely the optics can resolve features; source power determines how quickly the scanner can deliver the required exposure dose; and throughput is the resulting wafers-per-hour figure under specified process, field, and uptime conditions.
For current ASML platforms, the low-NA NXE family uses 0.33 NA and the High-NA EXE family uses 0.55 NA. Both use 13.5 nm EUV light. Published examples show why the numbers cannot be ranked in isolation: an imec report associated a 250 W source with more than 125 wafers per hour on an NXE:3400B in 2018, while ASML reported 175 wafers per hour for the EXE:5200B in its 2025 annual-report material. Those figures were produced under different tool generations and operating assumptions.
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The comparison framework: NA, power and throughput must be read together
A useful EUV scanner comparison answers three linked questions:
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- Can the projection optics print the required pattern? Examine NA, wavelength, resolution capability, depth of focus, overlay and edge-placement error.
- Can the source deliver the exposure dose fast enough? Record the source-power measurement plane, spectral bandwidth, dose in mJ/cm² and conversion efficiency.
- Can the complete tool sustain production output? Check wafers per hour at a stated dose and wafer size, then account for field size, stage motion, wafer handling, focus control, maintenance and availability.
A watt value without its measurement plane is incomplete, and a wafers-per-hour value without dose, wafer size and availability assumptions is not a transferable productivity ranking. Start with the layer you need to print, then test whether the scanner’s process window and sustained output meet that requirement.
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What numerical aperture tells you
NA is the optical acceptance angle
Numerical aperture describes the angular range of EUV light accepted by the projection optics. In the Rayleigh description of imaging, printable resolution scales with wavelength and the inverse of NA: higher NA permits finer details when the process factor and other conditions are held comparable. Current ASML EUV scanners use 13.5 nm light, so changing from 0.33 to 0.55 NA changes the optical resolution limit without changing the EUV wavelength.
NA is therefore an imaging specification, not a direct speed specification. A larger NA can print smaller features, but it does not by itself say how much dose the resist needs or how many wafers the scanner will process in an hour.
Why depth of focus belongs beside resolution
The same increase in NA that sharpens the aerial image also narrows the depth of focus. That reduces the vertical process margin available for wafer topography, film-stack variation, focus errors and resist-thickness changes. A scanner with a higher headline NA can consequently require tighter wafer leveling, focus control and process integration.
For a fair comparison, put resolution and depth of focus in the same evaluation. Ask for the conditions behind each number, including the process factor, illumination setting, mask, resist stack and focus criterion. A nominal half-pitch capability is not equivalent to a demonstrated production window.
0.33-NA NXE and 0.55-NA EXE
| Characteristic | NXE low-NA platform | EXE High-NA platform |
|---|---|---|
| Numerical aperture | 0.33 | 0.55 |
| EUV wavelength | 13.5 nm | 13.5 nm |
| Optical implication | Established low-NA EUV imaging platform | Higher resolving power with a smaller depth of focus |
| Platform statement | ASML identifies NXE as its current low-NA platform | ASML identifies EXE as its High-NA platform |
High-NA optics are not simply a larger version of the low-NA system. imec describes the 0.55-NA optical system as requiring much larger and heavier mirrors, with polishing work taking months. That optical scale affects manufacturing, handling, maintenance and the maturity of the surrounding mask, resist and metrology ecosystem. ASML also describes the EXE platform as having a novel optics design and significantly faster wafer and reticle stages.
How to interpret EUV source power
Always identify the measurement plane
“Source power” can refer to different points in the optical path. A supplier may quote power generated by the plasma source, power entering the collector, power available after intermediate optics or power delivered at the wafer. Mirror reflectivity and other losses mean those values are not interchangeable.
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When recording a power specification, write down the measurement plane exactly as supplied. Also record the spectral bandwidth or in-band definition, because a broad-spectrum watt value and an in-band EUV watt value do not represent the same usable exposure energy. If the plane or bandwidth is not stated, mark it as not stated rather than treating the number as a complete specification.
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Power only matters through dose
Resist exposure is controlled by dose, normally expressed in mJ/cm². A higher source-power rating can reduce exposure time only if the added power reaches the wafer efficiently and the resist, mask and illumination conditions remain suitable. Dose requirements vary with resist chemistry, feature type, mask quality, illumination and process target.
Conversion efficiency is another essential field. Two sources with the same nominal power can produce different wafer-level dose rates if one has greater losses in the collector or projection optics. Ask for wafer-level power or dose rate under the intended illumination setting, not just the source-generator rating.
The NXE:3400B example
In a 2018 statement, imec associated the NXE:3400B with a 250 W light source and throughput of more than 125 wafers per hour for high-volume production. The statement does not, by itself, establish the measurement plane, spectral bandwidth, dose, field conditions or sustained availability behind the watt figure. Use it as a dated system example, not as a universal conversion between watts and wafers per hour.
What wafers per hour really measures
Throughput is the number of wafers completed per hour under a defined recipe and operating model. It includes more than the time the EUV source is emitting. The scanner must load and align the wafer, map its surface, expose every required field, move the wafer and reticle stages, manage focus and leveling, and unload the wafer. Source interruptions, preventive maintenance, resist handling and operator or automation delays reduce sustained output.
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Published throughput examples
| Tool or platform | NA | Source-power information | Dose | Throughput | Wafer and field context | Date and qualification |
|---|---|---|---|---|---|---|
| NXE:3400B | NXE platform value: 0.33 | 250 W light source; measurement plane and spectral definition not stated in the cited imec statement | Not stated | More than 125 wafers/hour | Wafer size and field conditions not stated in the cited statement | imec, 2018; described for high-volume production |
| EXE:5200B | EXE High-NA value: 0.55 | ASML reports an improved EUV source delivering increased power at wafer level; exact watt figure not stated | Not stated | 175 wafers/hour | Wafer size, field conditions and detailed availability assumptions not stated | ASML annual-report material, 2025; ASML says this is 60% higher productivity than EXE:5000 |
| NXE:3600D product specification | 0.33 | Not stated | Not stated | Not stated | 300 mm wafers; 26 mm × 33 mm exposure field | ASML product-page specification |
ASML’s 2025 figure for the EXE:5200B should not be compared with the imec NXE:3400B figure as though the tools were tested in one controlled experiment. They belong to different generations and platforms, and the public statements do not provide a common dose, field, wafer, uptime and measurement-plane set.
A specification sheet that supports a fair comparison
Build one row per tool and fill every column before drawing a conclusion. A missing value is itself a finding: it identifies the question that must be answered by the supplier.
| Category | Record | Why it changes the decision |
|---|---|---|
| Imaging | NA; wavelength; resolution or half-pitch claim; process factor; illumination mode; depth of focus | Shows whether the tool can print the target layer with adequate focus margin |
| Overlay and placement | Overlay budget, edge-placement error and measurement conditions | Separates a sharp image from a layer that can actually align in a process flow |
| Power | Power value, measurement plane, in-band definition, spectral bandwidth and conversion efficiency | Prevents generator power from being mistaken for wafer-level dose rate |
| Dose | Nominal dose in mJ/cm², dose latitude and resist stack | Determines exposure time and process robustness |
| Productivity | Wafers/hour, wafer diameter, field size, number of fields, stage assumptions and availability | Makes throughput figures comparable and exposes hidden overhead |
| Manufacturing practicality | Mask constraints, resist compatibility, focus and leveling capability, tool footprint and service requirements | Shows whether the scanner can be integrated into the fab rather than demonstrated only in a lab |
| Maturity | Production status, installed base, maintenance model, spare-parts support and ecosystem readiness | Indicates operational risk and the likely effort required to qualify the tool |
| Economics | Acquisition and operating cost, utilities, consumables and cost per wafer at the intended mix | A higher wafer-per-hour number is not automatically a lower cost per good wafer |
Step-by-step method for comparing two scanners
- Define the layer and production target. State the critical dimensions, overlay requirement, wafer diameter, annual wafer volume, resist stack and acceptable defect or edge-placement limits. Without this baseline, “best” has no technical meaning.
- Separate the optical question from the productivity question. First determine whether 0.33 NA or 0.55 NA provides the required resolution and depth of focus. Then determine how much dose the selected process needs and how quickly each tool can deliver it.
- Normalize wavelength and NA data. Current ASML EUV platforms use 13.5 nm light. Record NA as a dimensionless value and request the resolution test conditions rather than comparing an isolated marketing limit.
- Pin down source power. Ask where the wattage was measured, what spectral bandwidth was counted, whether the value is continuous or peak, and what power reaches the wafer under the intended illumination setting.
- Attach dose to every throughput number. Enter the resist dose, wafer size, field size, number of fields and stage recipe beside wafers/hour. If a value is quoted without those conditions, label the conditions “not stated.”
- Distinguish peak from sustained output. Request availability assumptions, source uptime, planned maintenance, unplanned downtime and the observation period. A short demonstration rate is not the same as a fab’s sustained rate.
- Check process-window data. Compare focus-exposure matrices, dose latitude, overlay and edge-placement error. Higher NA can improve resolution while making focus control more demanding.
- Evaluate integration constraints. Review mask specifications, resist and outgassing requirements, wafer handling, metrology, defect inspection, utilities, footprint, service access and operator training.
- Model cost per good wafer. Include source efficiency, consumables, maintenance, uptime, yield and the number of patterning steps. Use the same product mix for both tools.
- Document dates and status. Mark each value as a production specification, a measured demonstration or a roadmap claim. Product generations change quickly, so a date is part of the specification.
Why higher NA can reduce practical productivity
Higher NA is attractive because it increases resolving power, but it can narrow the focus margin and increase sensitivity to wafer topography, chucking, leveling and resist uniformity. The process team may need tighter controls or additional metrology to obtain the theoretical benefit.
The optical hardware is also more demanding. imec reports that the 0.55-NA system required much larger, heavier mirrors polished for months by ZEISS. That engineering challenge can influence tool assembly, service procedures and ecosystem readiness. These are not reasons to reject High-NA; they are reasons to evaluate the complete production system rather than selecting by NA alone.
Stage performance matters as well. ASML describes EXE as using significantly faster wafer and reticle stages. Faster stages can offset some exposure and field-scan time, but their contribution must be measured in the same recipe used for the throughput claim.
Independent reader supportYour contribution helps us test, update, and keep practical guides available for everyone.Common comparison mistakes and how to correct them
Treating source watts as a universal speed rating
Mistake: ranking tools by the largest watt number. Correction: compare wafer-level, in-band power and dose rate at the same illumination and resist conditions.
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Comparing wafers/hour from different recipes
Mistake: placing 125 wafers/hour and 175 wafers/hour in one league table without conditions. Correction: add dose, wafer diameter, field count, stage assumptions and availability; otherwise mark the values as system-specific examples.
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Mistake: assuming the highest NA always gives the best manufacturing result. Correction: compare the usable focus-exposure window and overlay performance for the actual layer stack.
Mixing product specifications with roadmap claims
Mistake: presenting a planned capability as an installed production specification. Correction: label the source, publication date, tool generation and production status for every figure.
Assuming a larger field is always faster
Mistake: using field area as a proxy for throughput. Correction: calculate the number of fields per wafer and include scan, stage, alignment and wafer-handling overhead. The NXE:3600D specification, for example, lists a 26 mm × 33 mm exposure field on 300 mm wafers; that is a defined geometry, not a complete wafers-per-hour claim.
Leaving unavailable values blank without saying why
Mistake: filling an unknown dose or wafer-size field with an inferred value. Correction: write “not stated” and request the missing condition. An explicit unknown is safer than a false precision.
Choosing the right emphasis for different decisions
When the limiting problem is resolution
Prioritize NA, illumination, process factor, depth of focus and edge-placement error. A 0.55-NA platform may offer the needed imaging margin, but qualify focus control, resist behavior, mask requirements and overlay before treating the optical capability as a production advantage.
When the limiting problem is cycle time
Prioritize wafer-level dose rate, source uptime, stage speed, field count and sustained availability. A 0.33-NA system with a mature process and high availability can outperform a theoretically faster architecture if the latter spends more time in maintenance or qualification.
When the limiting problem is cost per good wafer
Use a full cost model. Include acquisition, utilities, source efficiency, maintenance, consumables, yield, uptime and the number of exposures per wafer. Throughput belongs in the denominator only after it has been normalized to the same dose and product mix.
When the decision concerns a future technology node
Separate current production evidence from roadmap timing. Record which capabilities are demonstrated, which are qualified for volume production and which remain announced targets. Revisit the comparison when tool revisions, resist platforms or ecosystem support change.
What the headline figures support—and what they do not
The established platform distinction is clear: 0.33 NA for NXE and 0.55 NA for EXE, both at 13.5 nm. The NXE:3600D specification also establishes a 300 mm wafer format and a 26 mm × 33 mm exposure field. The dated throughput examples establish that source improvements and system design can produce high wafer-per-hour figures, but they do not create a universal watts-to-throughput rule.
A defensible buying or process decision therefore reports the complete tuple: NA and imaging window; source power at a named plane; dose and spectral definition; wafers per hour at a stated wafer size and field recipe; and the availability, maintenance and integration assumptions behind the result.
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